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Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates<xref ref-type="fn" rid="cpb142991fn1">*</xref>
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Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates<xref ref-type="fn" rid="cpb142991fn1">*</xref>
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The calculated InGaN band gap as a function of indium composition for... | Download Scientific Diagram
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In situ stress measurements during MOCVD growth of thick N-polar InGaN: Journal of Applied Physics: Vol 122, No 8
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Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates<xref ref-type="fn" rid="cpb142991fn1">*</xref>
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Effects of stress and strain distribution on performance analysis of GaN/ InGaN/GaN core/shell/shell radial nanowires for solar energy harvesting | Semantic Scholar
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Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses | Semantic Scholar
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Figure 4 from Effects of stress and strain distribution on performance analysis of GaN/InGaN/GaN core/shell/shell radial nanowires for solar energy harvesting | Semantic Scholar
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Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates | SpringerLink
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