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Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes<xref ref-type="fn" rid="cpb150161fn1">*</xref>
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Asymmetric reciprocal space maps of GaN and InGaN (10.5) reflections... | Download Scientific Diagram
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a) Schematic illustration of the InGaN‐based LED structure grown on... | Download Scientific Diagram
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Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods | ACS Applied Materials & Interfaces
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Micromachines | Free Full-Text | Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays
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a) Time-integrated PL of highly excited MBE-grown InGaN/InGaN MQWs at... | Download Scientific Diagram
Insight into the Ga/In flux ratio and crystallographic plane dependence of MBE self-assembled growth of InGaN nanorods on patterned sapphire substrates - Nanoscale (RSC Publishing)
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a) Time-integrated PL of highly excited MBE-grown InGaN/InGaN MQWs at... | Download Scientific Diagram
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